Q2
(a) Draw the circuit diagram, function table, logic symbol and switch model for a CMOS gate (using six transistors) with two inputs A and B and an output Z, such that Z = 0 if A = 1 and B = 0, and Z = 1 otherwise (20 marks) (b) For the signals f₁(t) and f₂(t) shown in the figures below, find and sketch $\int_{-\infty}^{t} f(x)\,dx$ : (20 marks) (c) In the circuit given here, find the value of voltage $v_1$ : (10 marks)
हिंदी में प्रश्न पढ़ें
(a) A और B दो निवेश तथा एक निर्गम Z वाले एक CMOS गेट (छह ट्रांजिस्टर प्रयोग करते हुए) के लिए परिपथ आरेख, फलन तालिका, तार्किक चिह्न तथा सिवचन नमूना इस प्रकार बनाइए कि Z = 0 यदि A = 1 और B = 0 हो तथा अन्य स्थितियों में Z = 1 हो (20 अंक) (b) नीचे दिए गए चित्र में प्रदर्शित संकेतों f₁(t) और f₂(t) के लिए $\int_{-\infty}^{t} f(x)\,dx$ ज्ञात कीजिए एवं आरेखित कीजिए : (20 अंक) (c) यहाँ दिए गए परिपथ में वोल्टता $v_1$ का मान ज्ञात कीजिए : (10 अंक)
Directive word: Draw
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How this answer will be evaluated
Approach
Begin with the directive 'draw' for part (a), which demands precise circuit diagrams, truth tables, and switch models for the 6-transistor CMOS gate implementing Z = NOT(A AND NOT(B)). Allocate approximately 40% of effort to part (a) given its 20 marks, 35% to part (b) for signal integration with proper sketching of ramp/step waveforms, and 25% to part (c) for the circuit analysis. Structure as: (a) complete CMOS characterization with all four required elements, (b) mathematical integration with graphical interpretation showing accumulation of area under curves, (c) systematic nodal/mesh analysis for v₁.
Key points expected
- Part (a): Correct identification of the logic function as Z = A' + B (OR gate with inverted A, or equivalently Z = NOT(A AND NOT(B))) with proper PMOS-NMOS network topology using exactly 6 transistors
- Part (a): Complete function table showing all four input combinations with correct output states, and accurate IEEE/ANSI logic symbol representation
- Part (a): Switch model clearly distinguishing conducting/non-conducting states for both pull-up (PMOS) and pull-down (NMOS) networks
- Part (b): Correct mathematical integration of f₁(t) and f₂(t) showing piecewise linear/quadratic results with proper handling of limits from -∞ to t
- Part (b): Accurate sketch of integrated signals showing ramp characteristics, continuity at transition points, and proper asymptotic behavior
- Part (c): Application of KCL/KVL or nodal analysis to solve for v₁, with identification of circuit topology (likely resistive divider, op-amp, or transistor circuit)
- Part (c): Correct numerical value with proper units and sign convention for v₁
Evaluation rubric
| Dimension | Weight | Max marks | Excellent | Average | Poor |
|---|---|---|---|---|---|
| Concept correctness | 25% | 12.5 | For (a): correctly identifies the logic as Z = A' + B with proper CMOS complementary network design; for (b): applies fundamental theorem of calculus correctly with proper handling of piecewise integration limits; for (c): selects appropriate analysis method (nodal/mesh) with correct circuit laws application | Identifies basic logic function but makes minor errors in transistor sizing or network topology; integration concept understood but limits handled incorrectly; applies KCL/KVL with minor sign errors | Fundamental misunderstanding of CMOS operation (e.g., PMOS in pull-down), incorrect logic function identification, or failure to recognize integration as area accumulation; major errors in circuit law application |
| Numerical accuracy | 20% | 10 | Part (b): exact values of integrated functions at all critical time points with correct slopes and intercepts; part (c): precise value of v₁ with correct significant figures and unit handling (V, mV, etc.) | Correct approach but arithmetic errors in final values; integration constants determined incorrectly; v₁ calculation has minor computational slip | Major calculation errors, incorrect integration constants, wrong final answer by factor of 10 or more, or missing units throughout |
| Diagram quality | 25% | 12.5 | Part (a): neat, labeled CMOS schematic with clear VDD, GND, input/output nodes, proper transistor symbols (gate, source, drain); standard logic symbol; clear switch model with ON/OFF states; part (b): properly scaled sketches with labeled axes, time markers, and asymptotic values | Diagrams present but labels incomplete, symbols non-standard, or sketches roughly drawn without proper scaling; missing some node labels or voltage levels | Unrecognizable schematics, missing essential components, no labels, or failure to provide required diagrams (circuit, symbol, switch model, or sketches) |
| Step-by-step derivation | 20% | 10 | Clear progression from given information to solution: for (a) systematic derivation of transistor network from truth table; for (b) explicit integration steps with interval-wise breakdown; for (c) complete nodal equations with substitution steps shown | Steps present but logical jumps exist; some intermediate steps omitted; integration performed without showing interval transitions; circuit analysis skips equation setup | No visible derivation, only final answers; or completely wrong approach with incoherent steps; missing essential intermediate results |
| Practical interpretation | 10% | 5 | For (a): comments on power dissipation, noise margins, or propagation delay relevance to Indian semiconductor industry (e.g., SCL Chandigarh); for (b): physical interpretation of integration as accumulator/integrator circuit behavior; for (c): practical significance of v₁ in circuit operation | Brief mention of practical relevance without elaboration; generic statements about CMOS advantages or integration applications | No practical context provided; purely mathematical/circuit treatment without connection to real-world EE applications or Indian industry context |
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